62613 tkim tc-00002948/62712 tkim/41006pe msim tb-00002191/12201 tsim ta-2005 no.6681-1/6 http://onsemi.com semiconductor components industries, llc, 2013 june, 2013 3lp01s p-channel small signal mosfet ? 30v, ? 0.1a, 10.4 , single smcp features ? low on-resistance ? ultrahigh-speed switching ? 2.5v drive speci cations absolute maximum ratings at ta=25c parameter symbol conditions ratings unit drain to source voltage v dss --30 v gate to source voltage v gss 10 v drain current (dc) i d --0.1 a drain current (pulse) i dp pw 10 s, duty cycle 1% --0.4 a allowable power dissipation p d 0.15 w channel temperature tch 150 c storage temperature tstg --55 to +150 c this product is designed to ?esd immunity < 200v * ?, so please take care when handling. * machine model package dimensions unit : mm (typ) 7013a-013 ordering number : en6681c ordering & package information device package shipping memo 3LP01S-TL-E smcp sc-75,sot-416 3,000 pcs./reel pb-free packing type: tl marking electrical connection xa lot no. lot no. 1 2 3 tl 3 1 2 1.6 1.6 0.75 0.8 0.4 0.4 0.5 0.5 0.6 0.2 0.3 0.1 0 to 0.1 0.1 min 1 : gate 2 : source 3 : drain smcp 3LP01S-TL-E stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above t he recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliabili ty.
3lp01s no.6681-2/6 electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max drain to source breakdown voltage v (br)dss i d = --1ma, v gs =0v --30 v zero-gate voltage drain current i dss v ds = --30v, v gs =0v --1 a gate to source leakage current i gss v gs =8v, v ds =0v 10 a cutoff voltage v gs (off) v ds = --10v, i d = --100 a --0.4 --1.4 v forward transfer admittance | yfs | v ds = --10v, i d = --50ma 80 110 ms static drain to source on-state resistance r ds (on)1 i d = --50ma, v gs = --4v 8 10.4 r ds (on)2 i d = --30ma, v gs = --2.5v 11 15.4 r ds (on)3 i d = --1ma, v gs = --1.5v 27 54 input capacitance ciss v ds = --10v, f=1mhz 7.5 pf output capacitance coss 5.7 pf reverse transfer capacitance crss 1.8 pf turn-on delay time t d (on) see speci ed test circuit. 24 ns rise time t r 55 ns turn-off delay time t d (off) 120 ns fall time t f 130 ns total gate charge qg v ds = --10v, v gs = --10v, i d = --100ma 1.43 nc gate to source charge qgs 0.18 nc gate to drain ?miller? charge qgd 0.25 nc diode forward voltage v sd i s = --100ma, v gs =0v --0.83 --1.2 v switching time test circuit pw=10 s d.c . 1% 0v --4v v in p. g 50 g d i d = --50ma r l =300 v dd = --15v v out 3lp01s s v in
3lp01s no.6681-3/6 0 0 --0.01 --0.02 --0.03 --0.04 --0.06 --0.07 --0.08 --0.09 --0.10 --0.4 --0.05 --0.8 --1.2 --1.6 --2.0 --0.2 --0.6 --1.0 --1.4 --1.8 i d -- v ds v gs = --1.5v --3.5v --6.0v --2.0v --4.0v --3.0v --2.5v 0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --4.0 --3.5 0 --0.02 --0.04 --0.06 --0.08 --0.10 --0.12 --0.14 --0.16 --0.18 --0.20 i d -- v gs v ds = --10v 0 0 -- 1 -- 2 -- 3 5 -- 4 10 -- 5 15 20 25 -- 6 30 --7 --8 --9 --10 r ds (on) -- v gs ta=25 c i d = --30ma --50ma --0.01 1.0 --0.1 23 57 23 100 7 5 3 2 10 7 5 3 2 r ds (on) -- i d v gs = --4v it00077 it00079 it00080 it00078 ta= --25 c 25 c 75 c ta=75 c 25 c --25 c gate to source voltage, v gs -- v drain current, i d -- a drain to source voltage, v ds -- v drain current, i d -- a drain current, i d -- a static drain to source on-state resistance, r ds (on) -- gate to source voltage, v gs -- v static drain to source on-state resistance, r ds (on) -- --0.01 0.01 --0.1 1.0 7 5 3 2 7 5 3 2 0.1 3 2 7 5 3 2 drain current, i d -- a | y fs | -- i d v ds = --10v static drain to source on-state resistance, r ds (on) -- static drain to source on-state resistance, r ds (on) -- --60 4 2 --40 6 --20 8 10 0 12 14 20 40 16 60 18 80 100 120 140 160 ambient temperature, ta -- c r ds (on) -- ta i d = --30ma, v gs = --2.5v i d = --50ma, v gs = --4.0v it00083 it00084 ta= --25 c 25 c 75 c --0.01 1.0 --0.1 10 7 5 3 2 100 7 5 3 2 3 2 7 5 3 2 drain current, i d -- a drain current, i d -- ma r ds (on) -- i d v gs = --2.5v --0.1 --1.0 1000 7 5 3 2 100 7 5 3 2 10 23 23 57 r ds (on) -- i d v gs = --1.5v it00081 it00082 --25 c --25 c 25 c ta=75 c ta=75 c 25 c forward transfer admittance, | yfs | -- s static drain to source on-state resistance, r ds (on) --
3lp01s no.6681-4/6 0 0 -- 1 -- 2 -- 3 -- 4 -- 5 -- 6 -- 7 -- 8 1.6 0.6 0.8 1.0 1.2 1.4 0.2 0.4 -- 9 --10 total gate charge, qg -- nc v gs -- qg gate to source voltage, v gs -- v v ds = --10v i d = --0.1a 0 1.0 -- 5 10 7 5 3 2 7 5 3 2 --10 --15 100 --20 --30 --25 drain to source voltage, v ds -- v ciss, coss, crss -- v ds ciss, coss, crss -- pf f=1mhz --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 --1.1 --0.01 --0.1 3 2 7 5 3 2 diode forward voltage, v sd -- v source current, i s -- a i s -- v sd v gs =0v it00085 it00087 it00088 --25 c 25 c ta=75 c ciss coss crss --0.01 23 57 10 7 5 3 2 7 5 3 2 --0.1 1000 100 drain current, i d -- a sw time -- i d switching time, sw time -- ns it00086 v dd = --15v v gs = --4v t f t r t d (off) t d (on) 0 0 0.05 20 40 60 80 0.10 0.15 100 0.20 120 140 160 ambient temperature, ta -- c p d -- ta allowable power dissipation, p d -- w it02381
3lp01s no.6681-5/6 outline drawing land pattern example 3LP01S-TL-E mass (g) unit 0.003 * for reference mm unit: mm 0.5 0.5 0.7 1.3 0.7 0.7 0.6
3lp01s ps no.6681-6/6 note on usage : since the 3lp01s is a mosfet product, please avoid using this device in the vicinity of highly charged objects. on semiconductor and the on logo are registered trademarks of semiconductor components industries, llc (scillc). scillc owns th e rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. a listing of scillc?s product/patent covera ge may be accessed at www.onsemi.com/site/pdf/patent-marking.pdf. scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc ass ume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation sp ecial, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different ap plications and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life , or for any other application in which the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchas e or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiarie s, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the d esign or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws a nd is not for resale in any manner.
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